hello,guys...
leme share u some basic steps of 'fabrication process'.
1. Starting material : we take a semiconductor material i.e. poly crystal silicon.
2. Epitixial growth : here,atoms are arranged in single crystal fashion upon a single crystal substrate.
3. Oxidation : generation of silicon dioxide sio2, - preventing the diffussion of all impurities except hydroflouric acid,also collect thermal oxidation
4. Photolithography : it is possible to produce microscopically small circuit in the device pattern on si wafer,like x-ray,electro beam lithography
5. Diffusion : impurities are diffused so that it can be such borron,phospheres for n and p type,also its due to internally temprature.
6. Ion implantation :another technique for odd impurities ,same as diffusion but advantages is ,can be work on low temprature,here temprature can be controlled by outside.
7. Isolation technique : fabricate billion number of component in on a single IC so,its really required an isolation on a microscopic level.
8. Metalization : here we produce a thin metal film layer ,that will serve to make interconnection of the component on the chip.
-Aluminium is always used for the metalization of IC due to several advantage like good conductor , easy to deposite aluminium films.
9. Packaging : for safey purpose we cover the entire chip.
leme share u some basic steps of 'fabrication process'.
1. Starting material : we take a semiconductor material i.e. poly crystal silicon.
2. Epitixial growth : here,atoms are arranged in single crystal fashion upon a single crystal substrate.
3. Oxidation : generation of silicon dioxide sio2, - preventing the diffussion of all impurities except hydroflouric acid,also collect thermal oxidation
4. Photolithography : it is possible to produce microscopically small circuit in the device pattern on si wafer,like x-ray,electro beam lithography
5. Diffusion : impurities are diffused so that it can be such borron,phospheres for n and p type,also its due to internally temprature.
6. Ion implantation :another technique for odd impurities ,same as diffusion but advantages is ,can be work on low temprature,here temprature can be controlled by outside.
7. Isolation technique : fabricate billion number of component in on a single IC so,its really required an isolation on a microscopic level.
8. Metalization : here we produce a thin metal film layer ,that will serve to make interconnection of the component on the chip.
-Aluminium is always used for the metalization of IC due to several advantage like good conductor , easy to deposite aluminium films.
9. Packaging : for safey purpose we cover the entire chip.
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